Interband transitions laser engineering physics pdf conventional semiconductor lasers emit a single photon. The two energy bands are separated by an energy band gap in which there are no permitted states available for electrons to occupy. The energy of the photon and hence the emission wavelength of laser diodes is therefore determined by the band gap of the material system used. A QCL however does not use bulk semiconductor materials in its optically active region.
Because the position of the energy levels in the system is primarily determined by the layer thicknesses and not the material, it is possible to tune the emission wavelength of QCLs over a wide range in the same material system. In quantum cascade structures, electrons undergo intersubband transitions and photons are emitted. The electrons tunnel to the next period of the structure and the process repeats. Additionally, in semiconductor laser diodes, electrons and holes are annihilated after recombining across the band gap and can play no further part in photon generation. Electron wave functions are repeated in each period of a three quantum well QCL active region. The upper laser level is shown in bold. The scattering rate between two subbands is heavily dependent upon the overlap of the wave functions and energy spacing between the subbands.
QCL active region and injector. This is often achieved through designing the layer thicknesses such that the upper laser level is mostly localised in the left-hand well of the 3QW active region, while the lower laser level wave function is made to mostly reside in the central and right-hand wells. LO phonon-electron scattering can quickly depopulate the lower laser level. QC concept is not restricted to one material system. This material system has a varying quantum well depth depending on the aluminium fraction in the barriers.
The short wavelength limit of QCLs is determined by the depth of the quantum well and recently QCLs have been developed in material systems with very deep quantum wells in order to achieve short wavelength emission. 6 eV deep and has been used to fabricate QCLs emitting at 3 μm. 5 μm has been observed. QCLs may also allow laser operation in materials traditionally considered to have poor optical properties. Indirect bandgap materials such as silicon have minimum electron and hole energies at different momentum values. For interband optical transitions, carriers change momentum through a slow, intermediate scattering process, dramatically reducing the optical emission intensity.
This section has multiple issues. QCLs currently cover the wavelength range from 2. 355 μm with the application of a magnetic field. End view of QC facet with ridge waveguide.
Darker gray: InP, lighter gray: QC layers, black: dielectric, gold: Au coating. End view of QC facet with buried heterostructure waveguide. Darker gray: InP, lighter gray: QC layers, black: dielectric. Two types of optical waveguides are in common use. 10 um wide, and several mm long. Light is emitted from the cleaved ends of the waveguide, with an active area that is typically only a few micrometers in dimension. Here, the QC material is also etched to produce an isolated ridge.
Now, however, new semiconductor material is grown over the ridge. The change in index of refraction between the QC material and the overgrown material is sufficient to create a waveguide. Dielectric material is also deposited on the overgrown material around QC ridge to guide the injected current into the QC gain medium. Buried heterostructure waveguides are efficient at removing heat from the QC active area when light is being produced. This is the simplest of the quantum cascade lasers. An optical waveguide is first fabricated out of the quantum cascade material to form the gain medium. The residual reflectivity on the cleaved facets from the semiconductor-to-air interface is sufficient to create a resonator.